| PART |
Description |
Maker |
| Q62702-A1234 |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS[Siemens Semiconductor Group]
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| BAT165 |
Schottky Diodes - Low power Silicon AF Schottky rectifier diode
Silicon Schottky Diode
|
Infineon Technologies AG
|
| IRF7807VD1 IRF7807VD1TR |
Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| B5A60VIC B5A60 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| NTHD3101F NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTH |
Power MOSFET and Schottky Diode(20V, 4.4A???MOSFET)
Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
|
ON Semiconductor
|
| B5A100VI |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
